| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IGW40T120 | Low Loss IGBT in TrenchStop and Fieldstop technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
IGW40T120 | Low Loss IGBT in Trench and Fieldstop technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
Low Loss IGBT in TrenchStop and Fieldstop technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
包装：管件 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 75A TO247-3 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),SCR,PowerTO247-3L1200V,1.45V,40A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473−leadpackage,thisdeviceofferstheoptimum performancewithlowonstatevoltageandminimalswitchinglosses forbothhardandsoftswitchingtopologyinautomotiveapplications. Features | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),SCR,TO247-3L1200V,1.67V,40A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473−leadpackage,thisdeviceoffersgood performancewithlowonstatevoltageandlowswitchinglossesfor bothhardandsoftswitchingtopologiesinautomotiveapplications. Features Extremel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
IGBT–Power,Single,N-Channel,FieldStopVII(FS7),SCR,TO247-3L1200V,1.67V,40A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyin TO2473−leadpackage,thisdeviceoffersgoodperformancewithlow onstatevoltageandlowswitchinglossesforbothhardandsoft switchingtopologiesinautomotiveapplications. Features ExtremelyEfficientTrench | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
IGBT-FieldStop,Trench1200V,40A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),SCR,TO247-3L1200V,1.5V,40A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473−leadpackage,FGHL40T120RWDoffersthe optimumperformancewithlowconductionlossesandgoodswitching controllabilityforahighefficiencyoperationinvariousapplications likemotorcontr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
FieldStopIGBT DESCRIPTION ·HighCurrentCapability ·LowSwitchingLoss ·PositiveTemperatureCoefficientforEasyParallelOperation APPLICATIONS ·BoostandInverterinSolarApplications ·TUPS ·EnergyStorageSystem | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SoftSwitchingSeries •Shortcircuitwithstandtime–10µs •Designedfor: -SoftSwitchingApplications -InductionHeating •TrenchStop® andFieldstoptechnologyfor1200Vapplications offers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -easyparallelswitchi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SoftSwitchingSeries •Shortcircuitwithstandtime–10µs •Designedfor: -SoftSwitchingApplications -InductionHeating •TrenchStop® andFieldstoptechnologyfor1200Vapplications offers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -easyparallelswitchi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LOWLOSSDUOPACK:IGBTINTRENCHANDFIELDSTOPTECHNOLOGYWITHSOFT,FASTRECOVERYANTI-PARAALELEMCONHEDIODE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IGBTinTrenchStopandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IGBTinTrenchStopandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
TRIACs | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
TRIACs,40ASunbberless | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
TRIACs | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
HighspeedFieldStopTrenchIGBT | MGCHIP MagnaChip Semiconductor. | MGCHIP |
详细参数
- 型号：
IGW40T120
- 功能描述：
IGBT 晶体管 LOW LOSS IGBT TECH 1200V 40A
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
21+ |
TO-247 |
60000 |
原装正品进口现货 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-247 |
1076 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
TO-247 |
2999 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
英飞凌 |
新批次 |
N/A |
1500 |
询价 | |||
INFINEON |
100 |
原装现货,价格优惠 |
询价 | ||||
INFINEON |
23+ |
P-TO247-3-1 |
8600 |
全新原装现货 |
询价 | ||
INFINEO |
2016+ |
TO-247 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
Infineon |
18+ |
NA |
3198 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INF |
RoHSCompliant |
Tube |
60 |
neworiginal |
询价 |
相关规格书
更多- IGW40T120FKSA1
- IGW50N60T
- IGW50N65H5FKSA1
- IGW60T120FKSA1
- IGW75N60T
- IGZ50N65H5XKSA1
- IH03BQ151K
- IH03BQ500K
- IH03EB100K
- IH0505D
- IH0512D
- IH0515S
- IH0524S-H
- IH05BQ101K
- IH05BQ5R0K
- IH10BQ101K
- IH10EB100K
- IH10EB270K
- IH1205S
- IH1209S-H
- IH1212S
- IH1215S
- IH1224S-H
- IH2405D
- IH2409S
- IH2412S
- IH2415D
- IH2415S-H
- IH5040CWE+
- IH5042CPE+
- IH5043CPE+
- IH5049CPE+
- IH5141CPE+
- IH5143CPE+
- IH5352CPE+
- IHA102BA
- IHA103BA
- IHA104BA
- IHA105BA
- IHA15-0.5
- IHA201BA
- IHA203EB
- IHA204EB
- IHA205EB
- IHA301BA
相关库存
更多- IGW50N60H3
- IGW50N65F5FKSA1
- IGW60T120
- IGW75N60H3
- IGW75N60TFKSA1
- IH03BQ101K
- IH03BQ251K
- IH03BQ5R0K
- IH03EB101K
- IH0505S
- IH0512S-H
- IH0515S-H
- IH05BQ100K
- IH05BQ500K
- IH05BQ680K
- IH10BQ270K
- IH10EB101K
- IH1205D
- IH1205S-H
- IH1212D
- IH1215D
- IH1215S-H
- IH15BQ500K
- IH2405S
- IH2412D
- IH2412S-H
- IH2415S
- IH5040CPE+
- IH5041CPE+
- IH5042CWE+
- IH5043CWE+
- IH5050CPE+
- IH5142CPE+
- IH5145CPE+
- IHA101EB
- IHA102EB
- IHA103EB
- IHA104EB
- IHA105EB
- IHA15-0.9
- IHA203BA
- IHA204BA
- IHA205BA
- IHA24-0.5
- IHA302BA
