IGW40T120

分立式IGBT; • Lowest VCEsatdrop for lower conduction losses\n• Low switching losses\n• Easy parallel switching capability due to positive temperature coefficient in VCEsat\n• Very soft, fast recovery anti-parallel Emitter Controlled HE diode\n• High ruggedness, temperature stable behavior\n• Low EMI emissions\n• Low gate charge\n• Very tight parameter distribution\n\n优势:\n• Highest efficiency – low conduction and switching losses\n• Comprehensive portfolio in 600 V and 1200 V for flexibility of design\n• High device reliability\n;

Infineon's 1200 V, 40 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.\n

IGW40T120

Low Loss IGBT in TrenchStop and Fieldstop technology

IGW40T120

Low Loss IGBT in Trench and Fieldstop technology

IGW40T120_09

Low Loss IGBT in TrenchStop and Fieldstop technology

IGW40T120FKSA1

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 75A TO247-3

IHW40T120

SoftSwitchingSeries

•Shortcircuitwithstandtime–10µs •Designedfor: -SoftSwitchingApplications -InductionHeating •TrenchStop® andFieldstoptechnologyfor1200Vapplications offers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -easyparallelswitchi

IHW40T120

IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

IKW40T120

IGBTinTrenchStopandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode

IKW40T120

LOWLOSSDUOPACK:IGBTINTRENCHANDFIELDSTOPTECHNOLOGYWITHSOFT,FASTRECOVERYANTI-PARAALELEMCONHEDIODE

K40T120

IGBTinTrenchStopandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode