丝印：IGD；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：G01H1202；Package：PG-TO-252-3-11；HighSpeed 2-Technology

HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching

文件：912.52 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：G06ET6；Package：PG-TO252-3；IGBT in trench and field-stop technology

文件：1.45973 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：G10ET6；Package：PG-TO252-3；IGBT in trench and field-stop technology

文件：3.34354 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：G15ET6；Package：PG-TO252-3；IGBT in trench and field-stop technology

文件：3.34468 Mbytes 页数：13 Pages

Infineon

英飞凌

HighSpeed 2-Technology

HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior

文件：390.96 Kbytes 页数：13 Pages

Infineon

英飞凌

Intelligent Gate Driver Cores

Description The intelligent gate driver cores of the IGD515EI series are singlechannel drive components designed for IGBTs and power MOSFETs. They were developed specifically for the precise and reliable driving and protection of high-power modules, high-voltage modules, series and parall

文件：236.14 Kbytes 页数：19 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

Single Channel SCALE IGBT Driver Core

Features Direct replacement of IGD615 Highly approved SCALE technology Non-inverting or optionally inverting inputs Gate drive capability 16A, 6W Typical delay time of 315ns Power supply voltage monitoring set to 11.5V Superior EMC (dv/dt > 100V/ns, ESD > 2kV) Highly flexible single-channe

文件：352.39 Kbytes 页数：13 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

IGBT in TRENCHSTOP and Fieldstop technology

文件：460.08 Kbytes 页数：12 Pages

Infineon

英飞凌

IGBT in trench and field-stop technology

文件：3.34354 Mbytes 页数：13 Pages

Infineon

英飞凌