| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
3-TERMINALFIXEDVOLTAGEREGULATOR | HuashanHuashan Electronic Devices Co 华汕电子器件 | Huashan | ||
N-ChannelApplication-SpecificMOSFETs | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SynchronousBuckController GENERALDESCRIPTION TheADP1878/ADP1879areversatilecurrent-mode,synchronousstep-downcontrollers.Theyprovidesuperiortransientresponse,optimalstability,andcurrent-limitprotectionbyusingaconstantontime,pseudofixedfrequencywithaprogrammablecurrent-limit,currentcontrols | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
PROVISIONALDATASHEET Applications •HighFrequencySynchronousBuckConvertersforComputerProcessorPower •HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecomandIndustrialUse •100RGTested Benefits •VeryLowRDS(on)at4.5VVGS •Ultra-LowGateImpedance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ChipsetforDC-DCConverters Description ThesenewdevicesemployadvancedHEXFET®PowerMOSFETtechnologytoachieveanunprecedentedbalanceofon-resistanceandgatecharge.ThereducedconductionandswitchinglossesmakethemidealforhighefficiencyDC-DCconvertersthatpowerthelatestgenerationofmicroprocessor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencySynchronousBuckConvertersforComputerProcessorPower ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecom | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PROVISIONALDATASHEET Applications •HighFrequencySynchronousBuckConvertersforComputerProcessorPower •HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecomandIndustrialUse •100RGTested Benefits •VeryLowRDS(on)at4.5VVGS •Ultra-LowGateImpedance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelApplication-SpecificMOSFETs Description ThisnewdeviceemploysadvancedHEXFETPowerMOSFETtechnologytoachieveanunprecedentedbalanceofon-resistanceandgatecharge.ThereducedconductionandswitchinglossesmakeitidealforhighefficiencyDC-DCconvertersthatpowerthelatestgenerationofmicroprocessors. Th | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelApplication-SpecificMOSFETs Description ThisnewdeviceemploysadvancedHEXFETPowerMOSFETtechnologytoachieveanunprecedentedbalanceofon-resistanceandgatecharge.ThereducedconductionandswitchinglossesmakeitidealforhighefficiencyDC-DCconvertersthatpowerthelatestgenerationofmicroprocessors. Th | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelApplication-SpecificMOSFETs | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelApplication-SpecificMOSFETs | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelApplication-SpecificMOSFETs Description ThisnewdeviceemploysadvancedHEXFETPowerMOSFETtechnologytoachieveanunprecedentedbalanceofon-resistanceandgatecharge.ThereducedconductionandswitchinglossesmakeitidealforhighefficiencyDC-DCconvertersthatpowerthelatestgenerationofmicroprocessors. Th | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelApplication-SpecificMOSFETs | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PowerMOSFETforDC-DCConverters Description ThisnewdeviceemploysadvancedHEXFETPowerMOSFETtechnologytoachieveanunprecedentedbalanceofon-resistanceandgatecharge.ThereducedconductionandswitchinglossesmakeitidealforhighefficiencyDC-DCconvertersthatpowerthelatestgenerationofmicroprocessors. • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelApplication-SpecificMOSFETs Description ThisnewdeviceemploysadvancedHEXFETPowerMOSFETtechnologytoachieveanunprecedentedbalanceofon-resistanceandgatecharge.ThereducedconductionandswitchinglossesmakeitidealforhighefficiencyDC-DCconvertersthatpowerthelatestgenerationofmicroprocessors. • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelApplication-SpecificMOSFETs | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFETforDC-DCConverters Description ThisnewdeviceemploysadvancedHEXFETPowerMOSFETtechnologytoachieveanunprecedentedbalanceofon-resistanceandgatecharge.ThereducedconductionandswitchinglossesmakeitidealforhighefficiencyDC-DCconvertersthatpowerthelatestgenerationofmicroprocessors. • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
终端可免费供样,支持BOM配单 |
询价 | |||
IR |
23+ |
8000 |
专注配单,只做原装进口现货 |
询价 | |||
IR |
23+ |
8000 |
专注配单,只做原装进口现货 |
询价 | |||
IR |
06+ |
?TO220 |
1000 |
自己公司全新库存绝对有货 |
询价 | ||
SAMSUNG |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
N/A |
03+ |
SMD |
2000 |
询价 | |||
N/A |
23+ |
SMD |
6000 |
只有原装正品,老板发话合适就出 |
询价 | ||
N/A |
24+ |
SMD |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
RECTRON |
21+ROHS |
ITO-220A |
60000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
23+ |
TO-220 |
8238 |
询价 |
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