Dual N-Channel Silicon Junction Field-Effect Transistor

• Very High Impedance Differential Amplifiers • Electrometers

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INTERFET

Very High Input Impedance

InterFET

isc Silicon NPN Power Transistor

DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 250-400@IC = 1.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switchi

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ISC

无锡固电

Extended Temperature products for Industrial Applications

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PULSE

SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE)

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KEC

KEC(Korea Electronics)