N-Channel JFET

Features • InterFET N0026 Geometry • Low Noise: 3 nV/√Hz Typical • Low Ciss: 5.0pF Maximum • Low Leakage: 10pA Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Low Noise High Gain • Replacement for BF512 and BF513 • Mixers • Oscillators • VHF Amplifier

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INTERFET

JFET

InterFET

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

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STMICROELECTRONICS

意法半导体

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

文件：351.48 Kbytes 页数：54 Pages

STMICROELECTRONICS

意法半导体

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

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STMICROELECTRONICS

意法半导体