IRFP150

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea 175OperatingTemperature LowerLeakageCurrent:10A(Max.)@VDS=100V LowerRDS(ON):0.032Ω(Typ.)

IRFP150

PowerMOSFET(Vdss=100V,Rds(on)=0.035W,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFP150

HIGHVOLTAGEPOWERMOSFETDIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS™process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IRFP150

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

IRFP150

PowerMOSFET

IRFP150

iscN-ChannelMOSFETTransistor

IRFP150

SEMICONDUCTORS

IRFP150

PowerMOSFET

IRFP150

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not

IRFP150A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea 175OperatingTemperature LowerLeakageCurrent:10A(Max.)@VDS=100V LowerRDS(ON):0.032Ω(Typ.)