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IRF120

N-CHANNELPOWERMOSFETS

FEATURES •LowRDs

SamsungSamsung semiconductor

三星三星半导体

IRF120

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF120

8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF120

N-ChannelPowerMosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF120

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF120

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF120

NanosecondSwitchingSpeeds

DESCRIPTION •DrainCurrentID=8A@TC=25℃ •DrainSourceVoltage-:VDSS=100V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.3Ω(Max) •NanosecondSwitchingSpeeds APPLICATIONS •Switchingpowersupplies •Motorcontrols,InvertersandChoppers •Audioamplifiersandhighenergypul

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF120

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRFD120

1.3A,100V,0.300Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFD120

PowerMOSFET(Vdss=100V,Rds(on)=0.27ohm,Id=1.3A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultip

IRF

International Rectifier

产品属性

  • 产品编号:

    IE-120

  • 制造商:

    SolaHD

  • 类别:

    滤波器 > 电力线滤波器模块

  • 包装:

    散装

  • 滤波器类型:

    Single Phase

  • 配置:

    单级

  • 频率 - 工作:

    47Hz,63Hz

  • 应用:

    通用

  • 认证机构:

    CE,cUL,UL

  • 工作温度:

    -40°C ~ 45°C

  • 安装类型:

    DIN 轨道

  • 端接样式:

    端接块

  • 描述:

    ACTIVE TRK FILTER 1PH 20A 120V D

供应商型号品牌批号封装库存备注价格
ControlConcepts
46
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电源模块
1520
就找我吧!--邀您体验愉快问购元件!
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11000
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23
DIP
55000
原厂渠道原装正品假一赔十
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24+
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5000
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N/A
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2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
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N/A
60000
一级代理-主营优势-实惠价格-不悔选择
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更多IE-120供应商 更新时间2025-7-26 16:06:00