IDW60C65D1

Silicon Power Diode; • 1.35 V 温度稳定正向电压（VF）\n• 极高柔软度—实现最终柔软度和低 EMI 滤波的因素\n• 极低的 Irrm 可在升压开关上提供低开通损耗\n• 适合开关频率在 18 kHz 到 40 kHz之间的应用\n\n优势:\n;

Rapid 1 650 V 开关, 60 A发射极控制 硅功率二极管具有TO-247封装和共阴极配置，可对设计进行优化，尺寸更为紧凑，组装更加简易，从而降低了成本。\n

IDW60C65D1

Emitter Controlled Diode Rapid 1 Common Cathode Series

IDW60C65D1

5 kW two-channel interleaved CCM PFC EVAL board

IDW60C65D1XKSA1

Package：TO-247-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE 650V 60A RAPID 1 TO247-3

IDFW60C65D1

EmitterControlledDiodeRapid1AdvancedIsolationRapidSwitchingEmitterControlledDiodeinfullyisolatedpackage

Features: •650VEmitterControlledtechnology •Temperaturestablebehaviourofkeyparameters •Lowforwardvoltage(VF) •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •Maximumjunctiontemperature175°C •2500VRMSelectricalisolation,50/60Hz,t=1min •