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71V67603S133BG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S133BGG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S133BGGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S133BGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S133BQ

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S133BQG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S133BQGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S133BQI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S133PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V67603S133PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

IDT71V67603S133BGG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67603S133BGGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67603S133BQG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67603S133BQGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67603S133PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V67603S133PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

供应商型号品牌批号封装库存备注价格
IDT
23+
119-PBGA(14x22)
71890
专业分销产品!原装正品!价格优势!
询价
IDT
22+
119PBGA (14x22)
9000
原厂渠道,现货配单
询价
IDT
21+
119PBGA (14x22)
13880
公司只售原装,支持实单
询价
IDT
23+
119PBGA (14x22)
9000
原装正品,支持实单
询价
IDT
22+
BGA
5000
全新原装现货!自家库存!
询价
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IDT
23+
BGA
20000
原厂原装正品现货
询价
IDT
2023+
BGA
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
IDT
21+
BGA
50000
全新原装正品现货,支持订货
询价
IDT/Integrated Device Technolo
21+
BGA
36
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多IDT71V67603S133BGGI(WSKE)供应商 更新时间2024-6-18 10:50:00