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IDT71V3559S80PFGI

Synchronous ZBT SRAMs

文件:298.78 Kbytes 页数:28 Pages

IDT

IDT71V3559S80PFI

128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs

Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or

文件:996.97 Kbytes 页数:28 Pages

IDT

IDT71V3559S80BG

128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs

Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or

文件:996.97 Kbytes 页数:28 Pages

IDT

IDT71V3559S80BQI

128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs

Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or

文件:996.97 Kbytes 页数:28 Pages

IDT

IDT71V3559S80PF

128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs

Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or

文件:996.97 Kbytes 页数:28 Pages

IDT

详细参数

  • 型号:

    IDT71V3559S80PFGI

  • 功能描述:

    IC SRAM 4MBIT 80NS 100TQFP

  • RoHS:

    是

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 标准包装:

    2,000

  • 系列:

    MoBL® 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 异步

  • 存储容量:

    16M(2M x 8,1M x 16)

  • 速度:

    45ns

  • 接口:

    并联

  • 电源电压:

    2.2 V ~ 3.6 V

  • 工作温度:

    -40°C ~ 85°C

  • 封装/外壳:

    48-VFBGA

  • 供应商设备封装:

    48-VFBGA(6x8)

  • 包装:

    带卷(TR)

供应商型号品牌批号封装库存备注价格
IDT
23+
100-TQFP(14x14)
73390
专业分销产品!原装正品!价格优势!
询价
IDT
22+
100TQFP
9000
原厂渠道,现货配单
询价
IDT
25+
QFP
2573
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价
IDT, Integrated Device Technol
24+
100-TQFP(14x14)
56200
一级代理/放心采购
询价
IDT
25+
QFP-100
1001
就找我吧!--邀您体验愉快问购元件!
询价
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
专注配单,只做原装进口现货
询价
Renesas Electronics America In
26+
100-LQFP
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
IDT
26+
100TQFP
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
Renesas Electronics Corporatio
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
询价
更多IDT71V3559S80PFGI供应商 更新时间2026-10-3 10:51:00