IDT7164S20PB资料datasheet下载批发采购IDT-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
IDT7164S20PB	文件：104.93 Kbytes Page：9 Pages	CMOS STATIC RAM 64K (8K x 8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
7164S20DB	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
7164S20DGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
7164S20TDB	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
7164S20TDGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
7164S20TPG	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
7164S20TPGI	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
7164S20TPGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
7164S20YG	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
7164S20YGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
7164S20YGI	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
IDT7164S20D	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT7164S20DB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT7164S20P	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT7164S20TD	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT7164S20TDB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT7164S20TP	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT7164S20TPB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT7164S20Y	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司
IDT7164S20YB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	IDT7164S20PB	IDT	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市昌和盛利电子有限公司	IDT7164S20TDB	IDT	23+	28300MILCERD	9526		询价
深圳市新力诚科技有限公司	IDT7164S20TDB	IDT	2020+	原厂封装	6450	专营军工航天芯片,只做全新原装,价格超低!	询价
深圳市科思奇电子科技有限公司	IDT7164S20TDB	IDT	20+	CDIP	5000	支持实单/原盒/原包/原标/进口原装	询价
深圳市安富世纪电子有限公司	IDT7164S20TDB	IDT	21+	CDIP	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	IDT7164S20TDB	IDT	22+	28CDIP	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	IDT7164S20TDB	IDT	21+	28CDIP	13880	公司只售原装,支持实单	询价
深圳市环球伟业电子有限公司	IDT7164S20TDB	IDT/Integrated Device Technolo	21+	CDIP	26	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市盈盛科创科技有限公司	IDT7164S20TDB	IDT	22+	CDIP	4000	进口原装假一罚十现货	询价
易创佳业科技（深圳）有限公司	IDT7164S20TDB	IDT	23+	28CDIP	9000	原装正品，支持实单	询价

更多IDT7164S20PB供应商更新时间2024-4-27 9:01:00

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