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IDT7164S20Y中文资料PDF规格书

IDT7164S20Y
厂商型号

IDT7164S20Y

参数属性

IDT7164S20Y 封装/外壳为28-BSOJ(0.300",7.62mm 宽);包装为管件;类别为集成电路(IC) > 存储器;产品描述:IC SRAM 64KBIT PARALLEL 28SOJ

功能描述

CMOS STATIC RAM 64K (8K x 8-BIT)

文件大小

104.93 Kbytes

页面数量

9

生产厂商 Integrated Device Technology, Inc.
企业简称

IDT集成器

中文名称

深圳市集成器件技术有限公司官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-4-28 19:10:00

IDT7164S20Y规格书详情

Description

The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology.

Address access times as fast as 15ns are available and the circuit offers a reduced power standby mode. When CS1 goes HIGH or CS2 goes LOW, the circuit will automatically go to, and remain in, a low power stand by mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V.

All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.

The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28-pin 600 mil CERDIP.

Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.

Features

◆ High-speed address/chip select access time

– Military: 20/25/35/45/55/70/85/100ns (max.)

– Industrial: 25/35ns (max.)

– Commercial: 15/20/25/35ns (max.)

◆ Low power consumption

◆ Battery backup operation – 2V data retention voltage (L Version only)

◆ Produced with advanced CMOS high-performance technology

◆ Inputs and outputs directly TTL-compatible

◆ Three-state outputs

◆ Available in 28-pin DIP, CERDIP and SOJ

◆ Military product compliant to MIL-STD-883, Class B

产品属性

  • 产品编号:

    IDT7164S20Y

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    管件

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 异步

  • 存储容量:

    64Kb(8K x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    20ns

  • 电压 - 供电:

    4.5V ~ 5.5V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    28-BSOJ(0.300",7.62mm 宽)

  • 供应商器件封装:

    28-SOJ

  • 描述:

    IC SRAM 64KBIT PARALLEL 28SOJ

供应商 型号 品牌 批号 封装 库存 备注 价格
IDT
96+
SOJ
12
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
IDT
23+
28SOJ
9000
原装正品,支持实单
询价
IDT
21+
SOJ28
500
全新、原装
询价
IDT
2023+
SMD
15136
安罗世纪电子只做原装正品货
询价
IDT
2016+
SOJ-28
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
IDT
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
IDT
23+
28-SOJ
71890
专业分销产品!原装正品!价格优势!
询价
IDT
21+
28SOJ
13880
公司只售原装,支持实单
询价
IDT/Integrated Device Technolo
21+
SOP-28P
610
优势代理渠道,原装正品,可全系列订货开增值税票
询价
2020+
PLCC
844
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价