IDL08G65C5

650V SiC thinQ!??Generation 5 diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

IDL08G65C5

Silicon Carbide Diode

IDL08G65C5_16

Silicon Carbide Diode

IDL08G65C5XUMA1

Package：4-PowerTSFN；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 8A VSON-4

IDL08G65C5XUMA2

Package：4-PowerTSFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 8A VSON-4

IDH08G65C5

650VSiCthinQ!??Generation5diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

IDK08G65C5

650VSiCthinQ!??Generation5diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

IDK08G65C5

SiliconCarbideDiode