650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

文件：417.84 Kbytes 页数：2 Pages

Infineon

英飞凌

Silicon Carbide Diode

文件：727.63 Kbytes 页数：11 Pages

Infineon

英飞凌

采用 real2pin 封装的 650 V 碳化硅肖特基二极管

CoolSiC™ generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products sho • V br at 650V\n• Improved figure of merit (Q c x V f)\n• No reverse recovery charge\n• Soft switching reverse recovery waveform\n• Temperature independent switching behavior\n• High operating temperature (T j max 175°C)\n• Improved surge capability\n• Pb-free lead plating\n\n优势:\n• Higher safety ma;

Infineon

英飞凌

Silicon Carbide Diode

文件：727.63 Kbytes 页数：11 Pages

Infineon

英飞凌

Package：4-PowerTSFN；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 4A VSON-4

Infineon

英飞凌

Package：4-PowerTSFN；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 4A VSON-4

Infineon

英飞凌