IDL04G65C5

650V SiC thinQ!??Generation 5 diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

IDL04G65C5

Silicon Carbide Diode

IDL04G65C5_13

Silicon Carbide Diode

IDL04G65C5XUMA1

Package：4-PowerTSFN；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 4A VSON-4

IDL04G65C5XUMA2

Package：4-PowerTSFN；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 4A VSON-4

IDH04G65C5

650VSiCthinQ!??Generation5diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

IDK04G65C5

SiliconCarbideSchottkyDiode

FEATURES ·Highsurgecurrentcapability ·Noreverserecovery/Noforwardrecovery ·Benchmarkswitchingbehavior APPLICATIONS ·Solarinverter ·Powerfactorcorrection ·Switchmodepowersupply ·Uninterruptiblepowersupply

IDK04G65C5

650VSiCthinQ!??Generation5diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof