IDK10G65C5

CoolSiC™ Schottky Diode; • V br at 650V\n• Improved figure of merit (Q c x V f)\n• No reverse recovery charge\n• Soft switching reverse recovery waveform\n• Temperature independent switching behavior\n• High operating temperature (T j max 175°C)\n• Improved surge capability\n• Pb-free lead plating\n\n优势:\n• Higher safety margin against overvoltage and complements CoolMOS™ offer\n• Improved efficiency over all load conditions\n• Increased efficiency compared to Silicon Diode alternatives\n• Reduced EMI compared to snappier Silicon diode reverse recovery waveform\n• Highly stable switching performance\n• Reduced cooling requirements\n• Reduced risks of thermal runaway\n• RoHS compliant\n• Very high quality and high volume manufacturing capability \n;

CoolSiC™ generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). \n

IDK10G65C5

650V SiC thinQ!??Generation 5 diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

IDK10G65C5_13

Silicon Carbide Diode

IDK10G65C5XTMA1

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A TO263-2

IDK10G65C5XTMA2

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A TO263-2

IDL10G65C5

650VSiCthinQ!??Generation5diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

IDL10G65C5

SiliconCarbideDiode

IDW10G65C5

5thGenerationthinQ!TM650VSiCSchottkyDiode

1Description Features Revolutionarysemiconductormaterial-SiliconCarbide Benchmarkswitchingbehavior Noreverserecovery/Noforwardrecovery Temperatureindependentswitchingbehavior Highsurgecurrentcapability Pb-freeleadplating;RoHScompliant Qualifiedaccordin

IDW10G65C5

650VSiCthinQ!??Generation5diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof