IDK08G65C5

650V SiC thinQ!??Generation 5 diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

IDK08G65C5

Silicon Carbide Diode

IDK08G65C5_13

Silicon Carbide Diode

IDK08G65C5XTMA1

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 8A TO263-2

IDK08G65C5XTMA2

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 8A TO263-2

IDL08G65C5

650VSiCthinQ!??Generation5diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

IDL08G65C5

SiliconCarbideDiode