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IDK04G65C5

650V SiC thinQ!??Generation 5 diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IDK04G65C5

Silicon Carbide Schottky Diode

FEATURES ·Highsurgecurrentcapability ·Noreverserecovery/Noforwardrecovery ·Benchmarkswitchingbehavior APPLICATIONS ·Solarinverter ·Powerfactorcorrection ·Switchmodepowersupply ·Uninterruptiblepowersupply

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IDK04G65C5

CoolSiC™ Schottky Diode; • V br at 650V\n• Improved figure of merit (Q c x V f)\n• No reverse recovery charge\n• Soft switching reverse recovery waveform\n• Temperature independent switching behavior\n• High operating temperature (T j max 175°C)\n• Improved surge capability\n• Pb-free lead plating\n\n优势:\n• Higher safety margin against overvoltage and complements CoolMOS™ offer\n• Improved efficiency over all load conditions\n• Increased efficiency compared to Silicon Diode alternatives\n• Reduced EMI compared to snappier Silicon diode reverse recovery waveform\n• Highly stable switching performance\n• Reduced cooling requirements\n• Reduced risks of thermal runaway\n• RoHS compliant\n• Very high quality and high volume manufacturing capability \n;

CoolSiC™ generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). \n

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IDK04G65C5_13

Silicon Carbide Diode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IDK04G65C5XTMA1

Package:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB;包装:散装 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE SCHOTTKY 650V 4A TO263-2

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IDK04G65C5XTMA2

Package:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB;包装:管件 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE SCHOTTKY 650V 4A TO263-2

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

技术参数

  • Product Status:

    active and preferred

  • Technology:

    CoolSiC™ G5

  • Qualification:

    Industrial

  • VDC min:

    650 V

  • IF max:

    4 A

  • VF:

    1.5 V

  • QC:

    7 nC

  • Package:

    D2PAK (TO-263-2)

  • I(FSM) max:

    38 A

  • IR:

    0.2 µA

  • CT:

    130 pF

  • Ptot max:

    48 W

  • RthJC:

    1.9 K/W

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
24+
标准封装
7718
原厂渠道供应,大量现货,原型号开票。
询价
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
Infineon/英飞凌
2021+
PG-TO263-2
9600
原装现货,欢迎询价
询价
Infineon/英飞凌
24+
PG-TO263-2
25000
原装正品,假一赔十!
询价
Infineon/英飞凌
24+
PG-TO263-2
6000
全新原装深圳仓库现货有单必成
询价
Infineon/英飞凌
21+
PG-TO263-2
6820
只做原装,质量保证
询价
Infineon/英飞凌
23+
PG-TO263-2
10000
原装正品,支持实单
询价
Infineon/英飞凌
23+
PG-TO263-2
25630
原装正品
询价
Infineon/英飞凌
25
PG-TO263-2
6000
原装正品
询价
Infineon/英飞凌
2023+
PG-TO263-2
6000
原装正品现货、支持第三方检验、终端BOM表可配单提供
询价
更多IDK04G65C5供应商 更新时间2025-7-31 9:38:00