650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

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英飞凌

Silicon Carbide Schottky Diode

文件：887.64 Kbytes 页数：10 Pages

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英飞凌

Silicon Carbide Schottky Diode

文件：887.64 Kbytes 页数：10 Pages

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英飞凌

ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

文件：1.17465 Mbytes 页数：11 Pages

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英飞凌

6th Generation CoolSiC?

文件：1.03793 Mbytes 页数：10 Pages

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英飞凌

CoolSiC ™肖特基二极管 1200 V，采用 TO-220 real2pin 封装

采用 TO-220 real2pin 封装的 1200V, 20 A 第五代CoolSiC™ 肖特基二极管 为碳化硅肖特基势垒二极管提供了先进的技术。英飞凌在第二代产品推出时就已引入薄晶圆技术，现在与新的合并 pn 结结合使用，改善了二极管的浪涌能力。 因此开发出了一系列产品，以极具吸引力的成本提供了市场领先的效率、以及更高的系统稳定性 • 业内出色的正向电压(VF)\n• 无反向恢复电荷\n• Vf 的轻度正温度依赖性\n• 业内出色的冲击电流能力\n• 优异的热性能\n\n优势:\n• 高系统效率\n• 在低开关频率下实现更高的系统效率\n• 在高开关频率下实现更高的功率密度\n• 提高系统可靠性\n• 降低电磁干扰;

Infineon

英飞凌

采用 real2pin 封装的 650 V 碳化硅肖特基二极管

CoolSiC™ generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products sho • V br at 650V\n• Improved figure of merit (Q c x V f)\n• No reverse recovery charge\n• Soft switching reverse recovery waveform\n• Temperature independent switching behavior\n• High operating temperature (T j max 175°C)\n• Improved surge capability\n• Pb-free lead plating\n\n优势:\n• Higher safety ma;

Infineon

英飞凌

Unparalleled efficiency and price performance

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Sc • The lowest V F: 1.25V\n• Best-in-class figure of merit (Q c x V F)\n• No reverse recovery charge\n• Temperature independent switching behavior\n• High dv/dt ruggedness\n• Optimized thermal behavior\n\n优势:\n• Improved system efficiency over all load conditions\n• Increased system power density\n• R;

Infineon

英飞凌

Package：TO-220-2；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 20A TO220-2

INFINEON

英飞凌

Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTKY 650V 20A TO220-2-1

INFINEON

英飞凌