IDH20G65C5

650V SiC thinQ!??Generation 5 diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

IDH20G120C5

Silicon Carbide Schottky Diode

IDH20G120C5_15

Silicon Carbide Schottky Diode

IDH20G65C5_12

ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

IDH20G65C6

6th Generation CoolSiC?

IDH20G65C5XKSA1

包装：散装 封装/外壳：TO-220-2 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 20A TO220-2

IDH20G65C5XKSA2

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-220-2 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTKY 650V 20A TO220-2-1

IDH20G65C6XKSA1

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-220-2 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 41A TO220-2