5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

INFINEON

英飞凌

650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

文件：417.84 Kbytes 页数：2 Pages

INFINEON

英飞凌

丝印：D1665C5；Package：PG-TO220-2；SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：D1665C5；Package：PG-TO220-2；5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

INFINEON

英飞凌

5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

INFINEON

英飞凌

5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

文件：1.1745 Mbytes 页数：11 Pages

INFINEON

英飞凌

ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

文件：1.17523 Mbytes 页数：11 Pages

INFINEON

英飞凌

6th Generation CoolSiC?

文件：1.01623 Mbytes 页数：10 Pages

INFINEON

英飞凌

无与伦比的效率和性价比

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Sc • The lowest V F: 1.25V\n• Best-in-class figure of merit (Q c x V F)\n• No reverse recovery charge\n• Temperature independent switching behavior\n• High dv/dt ruggedness\n• Optimized thermal behavior\n\n优势:\n• Improved system efficiency over all load conditions\n• Increased system power density\n• R;

Infineon

英飞凌

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 16A TO220-2

INFINEON

英飞凌