650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

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INFINEON

英飞凌

采用 real2pin 封装的 650 V 碳化硅肖特基二极管

CoolSiC™ generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products sho • V br at 650V\n• Improved figure of merit (Q c x V f)\n• No reverse recovery charge\n• Soft switching reverse recovery waveform\n• Temperature independent switching behavior\n• High operating temperature (T j max 175°C)\n• Improved surge capability\n• Pb-free lead plating\n\n优势:\n• Higher safety ma;

Infineon

英飞凌

ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

文件：1.15682 Mbytes 页数：13 Pages

INFINEON

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Package：TO-220-2；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 8A TO220-2

INFINEON

英飞凌

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 8A TO220-2-1

INFINEON

英飞凌