丝印：IDF；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：C60ED1；Package：PG-TO247-3-AI；Emitter Controlled Diode Rapid 1 Advanced Isolation Rapid Switching Emitter Controlled Diode in fully isolated package

Features: • 650V Emitter Controlled technology • Temperature stable behaviour of key parameters • Low forward voltage (VF) • Low reverse recovery charge (Qrr) • Low reverse recovery current (Irrm) • Maximum junction temperature 175°C • 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min •

文件：1.34097 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：C80ED1；Package：PG-TO247-3-AI；Emitter Controlled Rapid-1 Diode in Advanced Isolation

Features • VRRM = 650 V • IF = 2x 40 A • 650 V emitter controlled technology • Temperature stable behaviour of key parameters • Low forward voltage (VF) • Low reverse recovery charge (Qrr) • Low reverse recovery current (Irrm) • Maximum junction temperature Tvjmax = 175°C • 2500 VRMS elec

文件：918.61 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：D40E65D1E；Package：PG-TO247-3-AI；650V Emitter Controlled technology

文件：1.45539 Mbytes 页数：11 Pages

Infineon

英飞凌