丝印：D03G60C；Package：PG-TO252-3；3rd Generation thinQ!TM SiC Schottky Diode

Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) f

文件：761.78 Kbytes 页数：7 Pages

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英飞凌

丝印：D03G60C；Package：PG-TO252-3；3 rd Generation thinQ!TM SiC Schottky Diode

Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) f

文件：761.78 Kbytes 页数：7 Pages

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英飞凌

3rd Generation thinQ!TM SiC Schottky Diode

文件：270.15 Kbytes 页数：7 Pages

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英飞凌

3rd Generation thinQ!TM SiC Schottky Diode

Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) f

文件：761.78 Kbytes 页数：7 Pages

Infineon

英飞凌

3 rd Generation thinQ!TM SiC Schottky Diode

Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) f

文件：761.78 Kbytes 页数：7 Pages

Infineon

英飞凌

3rd Generation thinQ!TM SiC Schottky Diode

Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) f

文件：761.78 Kbytes 页数：7 Pages

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3rd Generation thinQ!TM SiC Schottky Diode

文件：762.54 Kbytes 页数：7 Pages

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CoolSiC™ 肖特基二极管

英飞凌 CoolSiC™ 肖特基二极管 600V G3 在任意指定额定电流下均具有行业极低器件电容，进一步增强整个系统效率，特别是较高开关频率和低负载工况。第 3 代产品与代 2 代产品基于相同技术平台，在封装级别引进所谓的扩散焊接。 • 基准开关行为\n• 无反向恢复电荷\n• 与温度无关的开关行为\n• 高工作温度 (T j max 175°C)\n\n优势:\n• 与硅二极管相比，系统效率更高\n• 降低冷却要求\n• 支持更高频率/功率密度\n• 工作温度更低，提高系统稳定性\n• 降低电磁干扰\n ;

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Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 600V 3A TO252-3

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英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 600V 3A TO252-3

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英飞凌