Ultrafast Rectifier

FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·S

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无锡固电

Fast Switching EmCon Diode

文件：197.93 Kbytes 页数：9 Pages

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Fast Switching EmCon Diode

文件：210.9 Kbytes 页数：8 Pages

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Silicon Power Diode

The 600 V, 15 A emitter controlled silicon power diode in a D2PAK TO-263 package has been primarily designed for motor drive applications up to 30kHz. • Lowest VFvalues\n• Softest diodes available on the market\n• Tj(max)of 175°C\n• Qualified according to JEDEC Standard\n• Cooler packages and higher efficiency\n• Excellent EMI behavior\n• Excellent trade- off between cost and performance\n• Low conduction losses\n• Easy paralleling\n\n优势:;

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Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 29.2A TO263

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Fast Switching EmCon Diode

文件：210.9 Kbytes 页数：8 Pages

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Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 29.2A TO263

Infineon

英飞凌