丝印：ID7509；Package：TO-262；80A 75V N-channel Enhancement Mode Power MOSFET

Description These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. Features ● Low On Resistance ● Low Gate Charge ● Fast Switching ● Low Reverse Transfer Capacitances ● 1

文件：916.56 Kbytes 页数：11 Pages

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MOSFET

WXDH

东海半导体

Power MOSFET(Vdss=-30V)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：217.17 Kbytes 页数：8 Pages

IRF

30V NP-Channel Enhancement Mode MOSFET

Description The IRF7509 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =6 A RDS(ON)

文件：1.96618 Mbytes 页数：8 Pages

EVVOSEMI

翊欧

HEXFET짰Power MOSFET

文件：241.74 Kbytes 页数：8 Pages

IRF