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BA682

BandSwitchingDiodes

FEATURES •Siliconplanardiodes •Lowdynamicforwardresistance •Lowdiodecapacitance •Highreverseimpedance •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC APPLICATIONS •BandswitchinginVHF-tuners

VishayVishay Siliconix

威世科技威世科技半导体

BA682

Band-switchingdiodes

DESCRIPTION Planarhighperformanceband-switchingdiodesinaglassSOD80SMDpackage. FEATURES •Continuousreversevoltage:max.35V •Continuousforwardcurrent:max.100mA •Lowdiodecapacitance:max.1.5pF •Lowdiodeforwardresistance:max.0.7to1.2Ω. APPLICATION •Band-swit

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BA682

SiliconPlanarDiodes

FEATURES •Siliconplanardiodes •Lowdynamicforwardresistance •Lowdiodecapacitance •Highreverseimpedance •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC APPLICATIONS •BandswitchinginVHF-tuners

VishayVishay Siliconix

威世科技威世科技半导体

BA682

SILICONPINDIODES

●Low-lossVHFbandswitchforTVtuners

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BA682

SiliconEpitaxialPlanarDiodeSwitches?

SEMTECH

Semtech Corporation

BA682

BandSwitchingDiodes

FEATURES •Siliconplanardiodes •Lowdynamicforwardresistance •Lowdiodecapacitance •Highreverseimpedance •AEC-Q101qualified •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •BandswitchinginVHF-tuners

VishayVishay Siliconix

威世科技威世科技半导体

BA682A

LEDlevelmeterdriver,12-point,VUscale,dotorbardisplay

TheBA682AisamonolithicICforLEDlevelmeterapplications. Thedisplaylevelrangeis13mVrmsto327mVrms(Typ.),the0dBlevelis130mVrms(Typ.)andtheVUdisplayis-20dBto+8dB. TheconstantcurrentoutputscanbesetusingexternalcomponentsallowinguseofdifferentcolorLEDsinv

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BD682

MediumPowerLinearandSwitchingApplications

MediumPowerLinearandSwitchingApplications •MediumPowerDarlingtonTR •ComplementtoBD675A,BD677A,BD679AandBD681respectively

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BD682

PlasticMedium-PowerSiliconPNPDarlingtons

PlasticMedium−PowerSiliconPNPDarlingtons ...foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications. •HighDCCurrentGain— hFE=750(Min)@IC=1.5and2.0Adc •MonolithicConstruction •BD676,676A,678,678A,680,680A,682arecomplementarywithBD

MotorolaMotorola, Inc

摩托罗拉

BD682

PNPDARLIGNTONPOWERSILICONTRANSISTORS

PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703.

TEL

TRANSYS Electronics Limited

BD682

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD682

PlasticMedium?뭁owerSiliconPNPDarlingtons

PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BD682

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD675A/677A/679A/681 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD682

ComplementarypowerDarlingtontransistors

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD682

ComplementarypowerDarlingtontransistors

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD682

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD675A/677A/679A/681 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Formediumpowerlinearandswitchingapplications

SAVANTIC

Savantic, Inc.

BD682

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli

COMSET

Comset Semiconductor

BD682

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheBD681,aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-126plasticpackage. TheyareintendedforuseinmediumpowerlinarandswitchingapplicationsThecomplementaryPNPtypesareBD682,respectively.

TGS

Tiger Electronic Co.,Ltd

BD682

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD682

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli

COMSET

Comset Semiconductor

供应商型号品牌批号封装库存备注价格
2016+
CLCC
3526
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
SONY
21+
CLCC
12588
原装正品,自己库存 假一罚十
询价
SONY
2020+
CLCC
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
只做原装
21+
CLCC
36520
一级代理/放心采购
询价
SONY/索尼
2021+
CLCC
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
SONY
22+
CLCC
32350
原装正品 假一罚十 公司现货
询价
SONY/索尼
23+
CLCC
50000
全新原装正品现货,支持订货
询价
SONY
21+
CLCC
10000
原装现货假一罚十
询价
SONY/索尼
22+
CLCC
6200
强势库存!公司现货!
询价
SONY/索尼
22+
CLCC
9000
原装正品
询价
更多ICX682SQW-C供应商 更新时间2024-6-18 11:24:00