Band-switching diodes

DESCRIPTION Planar high performance band-switching diodes in a glass SOD80 SMD package. FEATURES • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.5 pF • Low diode forward resistance: max. 0.7 to 1.2 Ω. APPLICATION • Band-swit

文件：31.05 Kbytes 页数：5 Pages

PHI

飞利浦

Silicon Planar Diodes

FEATURES • Silicon planar diodes • Low dynamic forward resistance • Low diode capacitance • High reverse impedance • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Band switching in VHF-tuners

文件：46.53 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司

Band Switching Diodes

FEATURES • Silicon planar diodes • Low dynamic forward resistance • Low diode capacitance • High reverse impedance • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Band switching in VHF-tuners

文件：82.31 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Band Switching Diodes

FEATURES • Silicon planar diodes • Low dynamic forward resistance • Low diode capacitance • High reverse impedance • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Band switching in VHF-tuners

文件：228.28 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司

Silicon Epitaxial Planar Diode Switches?

文件：94.73 Kbytes 页数：2 Pages

SEMTECH

先之科

Band-switching diodes

Features ● Continuous reverse voltage:max. 35 V ● Continuous forward current:max. 100 mA ● Low diode capacitance:max. 1.5 pF ● Low diode forward resistance:max. 0.7 to 1.2Ω

文件：32.79 Kbytes 页数：1 Pages

KEXIN

科信电子

SILICON PIN DIODES

● Low-loss VHF band switch for TV tuners

文件：52.42 Kbytes 页数：3 Pages

SIEMENS

西门子

Band Switching Diodes

文件：62.45 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司

Band-switching diodes

DESCRIPTION\nPlanar high performance band-switching diodes in a glass SOD80 SMD package.FEATURES\n• Continuous reverse voltage: max. 35 V\n• Continuous forward current: max. 100 mA\n• Low diode capacitance: max. 1.5 pF\n• Low diode forward resistance: max. 0.7 to 1.2 Ω.APPLICATION\n• Band-switching • Continuous reverse voltage: max. 35 V\n• Continuous forward current: max. 100 mA\n• Low diode capacitance: max. 1.5 pF\n• Low diode forward resistance: max. 0.7 to 1.2 Ω.APPLICATION\n• Band-switching in VHF television tuners.;

恩XP

Silicon Epitaxial Planar Diode Switches

ST

意法半导体