Band-switching diode

DESCRIPTION Planar, high performance band-switching diode in a small ceramic SOD110 SMD package. FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF • Low diode forward resistance: max. 0.7 Ω. APPLICATIONS • Low loss band-switching in VHF television tuners • Surface mount h

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PHI

飞利浦

Band-switching diode

FEATURES · Ceramic SMD package · Low diode capacitance: max. 1.1 pF · Low diode forward resistance: max. 0.7 W. APPLICATIONS · Low loss band-switching in VHF television tuners · Surface mount high-speed switching circuits. DESCRIPTION Planar, high performance band-switching diode i

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恩XP

Band-switching diode

Overview Archived content is no longer updated and is made available for historical reference only.\nPlanar high-performance band-switching diode in a SOD110 very small ceramic SMD package. \n\n•Ceramic SMD package\n\n•Low diode capacitance\n\n•Low diode forward resistance;

恩XP

Complementary Plastic Silicon Power Transistors

. . . designed for low power audio amplifier and low-current, high speed switching applications. • High Collector-Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Win) — BD789, BD790 = 100 Vdc (Min) — BD791, BD792 • High DC Current Gain @ IQ = 200 mAdc hpE = 40-250 • LowCollector-Emitter Satura

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 3.7 x 3.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

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Central

Smal Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 3.7 x 3.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：650.89 Kbytes 页数：2 Pages

Central