DUAL 12/10/8-BIT VOLTAGE-OUTPUT DACS

文件：136.26 Kbytes 页数：9 Pages

ICMIC

Power MOSFET

VDSS = -55V RDS(on) = 0.105Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Po

文件：136.93 Kbytes 页数：7 Pages

IRF

Dual P-Channel MOSFET

Generation V Technology
Ultra Low On-Resistance
Surface Mount
Dynamic dv/dt Rating
Fast Switching
Lead-Free
VDS (V)=-55V
RDS(ON) 105m (VGS =-10V) Features
RDS(ON) 170m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhanced thermal charac

文件：347.05 Kbytes 页数：7 Pages

UMW

友台半导体

Dual P-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V)=-55V RDS(ON)

文件：334.84 Kbytes 页数：7 Pages

EVVOSEMI

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