丝印：IRF7342；Package：SOP-8；Dual P-Channel MOSFET

Generation V Technology
Ultra Low On-Resistance
Surface Mount
Dynamic dv/dt Rating
Fast Switching
Lead-Free
VDS (V)=-55V
RDS(ON) 105m (VGS =-10V) Features
RDS(ON) 170m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhanced thermal charac

文件：347.05 Kbytes 页数：7 Pages

UMW

友台半导体

Dual P-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V)=-55V RDS(ON)

文件：334.84 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

Power MOSFET

VDSS = -55V RDS(on) = 0.105Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Po

文件：136.93 Kbytes 页数：7 Pages

IRF

丝印：IRF7342；Package：SOP-8；Dual P-Channel MOSFET

Generation V Technology
Ultra Low On-Resistance
Surface Mount
Dynamic dv/dt Rating
Fast Switching
Lead-Free
VDS (V)=-55V
RDS(ON) 105m (VGS =-10V) Features
RDS(ON) 170m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhanced thermal charac

文件：347.05 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：IRF7342；Package：SOP-8；Dual P-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V)=-55V RDS(ON)

文件：334.84 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

采用 SO-8 封装的 IR MOSFET -55 V

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 P 通道 MOSFET;

Infineon

英飞凌

丝印：F7342；Package：SOIC8；Dual P-Channel Enhancement Mode MOSFET

GENERAL FEATURES * Vos=-60V b =-38A * Roson

文件：3.49337 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

FETKY

MOSFET & Schottky Diode

文件：144.47 Kbytes 页数：11 Pages

IRF

FETKY MOSFET & Schottky Diode

文件：200.2 Kbytes 页数：11 Pages

IRF

Ideal For Buck Regulator Applications

文件：203.33 Kbytes 页数：11 Pages

IRF