B4N60芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
B4N60	文件：1.3059 Mbytes Page：11 Pages	丝印：I4N60；Package：TO-262；4A 600V N-channel Enhancement Mode Power MOSFET Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. Features ● Fast Switching ● ESD Improved Capability ● 文件：1.3059 Mbytes 页数：11 Pages	WXDH 东海半导体	WXDH
I4N60	文件：1.3059 Mbytes Page：11 Pages	丝印：B4N60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. Features ● Fast Switching ● ESD Improved Capability ● 文件：1.3059 Mbytes 页数：11 Pages	WXDH 东海半导体	WXDH

更多I4N60供应商更新时间2026-4-17 9:31:00