丝印：I6；Package：X2SON；TPS7A05 1-μA Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

1 Features 1• Ultralow IQ: 1 μA (typ), 3 μA (max) – IGND: 6 μA (typ) at 200 mA • Excellent transient response • Packages: – 1.0-mm × 1.0-mm X2SON (4) – 0.65-mm × 0.65-mm DSBGA (4) – SOT-23 (5) – SOT-23 (3) • Input voltage range: 1.4 V to 5.5 V • Output accuracy: 1% typical, 3% ma

文件：3.71576 Mbytes 页数：55 Pages

TI

德州仪器

丝印：I6；Package：X2SON；TPS7A05 1-關A Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

文件：4.22821 Mbytes 页数：55 Pages

TI

德州仪器

丝印：I630；Package：TO-251；9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

文件：1.35377 Mbytes 页数：11 Pages

WXDH

东海半导体

丝印：I68A04；Package：PG-TLGA-4-2；High performance analog XENSIV™ MEMS microphone

Features • Surface mount package: 3.35mm x 2.5mm x 0.98mm • Analog single-ended output • Flat frequency response with low-frequency roll-off at 10Hz • Acoustic overload point at 130dBSPL • Signal-to-noise ratio of 68dB(A) SNR • Narrow sensitivity and phase tolerances • Omnidirectional picku

文件：1.35844 Mbytes 页数：16 Pages

Infineon

英飞凌

丝印：I600A；Package：SOT-23(DBV)；INA600 Low-Power, 2.7V to 40V Attenuating Difference Amplifier With 1MΩ>>1MΩ Input Impedance for Cost-Optimized Designs

1 Features • Ultra-high input impedance: >1MΩ • Supply range: 2.7V (±1.35V) to 40V (±20V) • Input voltage range: (V–) – 40V to (V–) + 85V • Precision voltage monitoring in noisy systems: – CMRR: 100dB (typical, G = 1/5) – Gain error: ±0.01% (typical) – Gain drift : ±1ppm/°C (typical) •

文件：2.76508 Mbytes 页数：39 Pages

TI

德州仪器

丝印：I600B；Package：SOT-23(DBV)；INA600 Low-Power, 2.7V to 40V Attenuating Difference Amplifier With 1MΩ>>1MΩ Input Impedance for Cost-Optimized Designs

1 Features • Ultra-high input impedance: >1MΩ • Supply range: 2.7V (±1.35V) to 40V (±20V) • Input voltage range: (V–) – 40V to (V–) + 85V • Precision voltage monitoring in noisy systems: – CMRR: 100dB (typical, G = 1/5) – Gain error: ±0.01% (typical) – Gain drift : ±1ppm/°C (typical) •

文件：2.76508 Mbytes 页数：39 Pages

TI

德州仪器

丝印：I600F；Package：SOT-23(DBV)；INA600 Low-Power, 2.7V to 40V Attenuating Difference Amplifier With 1MΩ>>1MΩ Input Impedance for Cost-Optimized Designs

1 Features • Ultra-high input impedance: >1MΩ • Supply range: 2.7V (±1.35V) to 40V (±20V) • Input voltage range: (V–) – 40V to (V–) + 85V • Precision voltage monitoring in noisy systems: – CMRR: 100dB (typical, G = 1/5) – Gain error: ±0.01% (typical) – Gain drift : ±1ppm/°C (typical) •

文件：2.76508 Mbytes 页数：39 Pages

TI

德州仪器

丝印：I60N10；Package：TO-262；60A 100V N-channel Enhancement Mode Power MOSFET

文件：714.67 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：I60N10；Package：TO-262；60A 100V N-channel Enhancement Mode Power MOSFET

文件：714.31 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：I60N10；Package：TO-262；60A 100V N-channel Enhancement Mode Power MOSFET

文件：713.52 Kbytes 页数：10 Pages

WXDH

东海半导体