N-Channel Enhancement Mode MOSFET

Feature  30V/250A RDS(ON)= 1.2 mΩ (typ.) @VGS = 10V RDS(ON)= 1.4 mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Battery management

文件：1.3364 Mbytes 页数：10 Pages

HUAYI

华羿微电

N-Channel Enhancement Mode MOSFET

Feature  30V/250A RDS(ON)= 1.2 mΩ (typ.) @VGS = 10V RDS(ON)= 1.4 mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Battery management

文件：1.3364 Mbytes 页数：10 Pages

HUAYI

华羿微电

N-Channel Enhancement Mode MOSFET

Feature  30V/250A RDS(ON)= 1.2 mΩ (typ.) @VGS = 10V RDS(ON)= 1.4 mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Battery management

文件：1.3364 Mbytes 页数：10 Pages

HUAYI

华羿微电

丝印：G012N08；Package：TOLL；N-Channel Enhancement Mode MOSFET

Feature Pin Description  80V/420A RDS(ON)=0.9 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Battery management

文件：604.36 Kbytes 页数：9 Pages

HUAYI

华羿微电

N-Channel Enhancement Mode MOSFET

Feature  100V/380A RDS(ON)=1.2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Battery management

文件：447.25 Kbytes 页数：9 Pages

HUAYI

华羿微电

丝印：G019N06；Package：PDFN8L；Single N-Channel Enhancement ModeMOSFET

Feature  60V/210A RDS(ON)= 1.6 mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant) Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool Application  Networking DC-DC Power System

文件：1.29313 Mbytes 页数：9 Pages

HUAYI

华羿微电

丝印：G038N03；Package：PDFN8L；Single N-Channel Enhancement Mode MOSFET

Feature  30V/84A RDS(ON)= 3.3 mΩ(typ.) @VGS = 10V RDS(ON)= 5.1 mΩ(typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Applications  Load Switch  Lithium battery protect board

文件：1.47605 Mbytes 页数：9 Pages

HUAYI

华羿微电

丝印：G053N10；Package：TO-263-2L；N-Channel Enhancement Mode MOSFET

Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Battery management

文件：411.6 Kbytes 页数：10 Pages

HUAYI

华羿微电

丝印：G053N10；Package：TO-220FB-3L；N-Channel Enhancement Mode MOSFET

Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Battery management

文件：411.6 Kbytes 页数：10 Pages

HUAYI

华羿微电

丝印：G090N06；Package：PDFN5X6-8L；Single N-Channel Enhancement Mode MOSFET

Feature Pin Description  60V/60A RDS(ON)= 7.7 mΩ(typ.)@VGS = 10V RDS(ON)= 11.8 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant) Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool A

文件：923.96 Kbytes 页数：9 Pages

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