首页 >HY628100ALLG/BLLG>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix | ||
128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh | HynixHynix Semiconductor 海力士海力士半导体 | Hynix |
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