HY628100B-E中文资料海力士数据手册PDF规格书

DESCRIPTION

The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V.

FEATURES

● Fully static operation and Tri-state output

● TTL compatible inputs and outputs

● Battery backup(L/LL-part)

-. 2.0V(min) data retention

● Standard pin configuration

-. 32pin SOP - 525mil

-. 32pin TSOPI - 8X20(Standard)