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HY57V161610D数据手册SK hynix中文资料规格书

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厂商型号

HY57V161610D

功能描述

2 Banks x 512K x 16 Bit Synchronous DRAM

制造商

SK hynix Hynix Semiconductor

中文名称

海力士 海力士半导体

数据手册

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更新时间

2025-8-8 8:02:00

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HY57V161610D规格书详情

描述 Description

DESCRIPTION          
THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16.
HY57V161610D is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 1,2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipeline design is not restricted by a `2N` rule.)FEATURES
• Single 3.0V to 3.6V power supply
• All device pins are compatible with LVTTL interface
• JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch
• All inputs and outputs referenced to positive edge of system clock
• Data mask function by UDQM/LDQM
• Internal two banks operation
• Auto refresh and self refresh
• 4096 refresh cycles / 64ms
• Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst
• Programmable CASLatency ; 1, 2, 3 Clocks

特性 Features

• Single 3.0V to 3.6V power supply
• All device pins are compatible with LVTTL interface
• JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch
• All inputs and outputs referenced to positive edge of system clock
• Data mask function by UDQM/LDQM
• Internal two banks operation
• Auto refresh and self refresh
• 4096 refresh cycles / 64ms
• Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst
• Programmable CASLatency ; 1, 2, 3 Clocks

技术参数

  • 型号:

    HY57V161610D

  • 制造商:

    HYNIX

  • 制造商全称:

    Hynix Semiconductor

  • 功能描述:

    2 Banks x 512K x 16 Bit Synchronous DRAM

供应商 型号 品牌 批号 封装 库存 备注 价格
HYNIX/海力士
18+
SOP
11316
全新原装现货,可出样品,可开增值税发票
询价
HY
23+
TSSOP
35200
只做原装主打品牌QQ询价有询必回
询价
现代
24+
QFN
103
原装现货假一罚十
询价
HY
01+
SOP50
3215
全新原装进口自己库存优势
询价
HYUNDAI
24+
NA/
30
优势代理渠道,原装正品,可全系列订货开增值税票
询价
HYNIX
2016+
TSOP
8880
只做原装,假一罚十,公司可开17%增值税发票!
询价
LT
23+
NA
6500
全新原装假一赔十
询价
HYNIX
20+
TSOP-50
35830
原装优势主营型号-可开原型号增税票
询价
HY
24+
TSSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
HYUNDAI
24+/25+
45
原装正品现货库存价优
询价