HY51V17403HG中文资料4M x 4Bit EDO DRAM数据手册SK hynix规格书

描述 Description

DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be
packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.FEATURES
• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 24(26)pin plastic SOJ / 24(26)pin TSOP-II
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)

特性 Features

• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 24(26)pin plastic SOJ / 24(26)pin TSOP-II
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)