HY51V18163HGJ-6数据手册SK hynix中文资料规格书

描述 Description

DESCRIPTION
The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)18163HG/HGL to be packaged in standard 400mil 42pin SOJ and 44(50) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.FEATURES
• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 42pin plastic SOJ / 44(50)pin TSOP-II (400mil)
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)
• 2CAS byte control

特性 Features

• Fast access time and cycle time
• Extended Data Out Mode capability
• Read-modify-write capability
• Multi-bit parallel test capability
• TTL(3.3V) compatible inputs and outputs
• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
• JEDEC standard pinout
• 42pin plastic SOJ / 44(50)pin TSOP-II (400mil)
• Single power supply of 3.3V +/- 0.3V
• Battery back up operation(L-version)
• 2CAS byte control