丝印：HY3215；Package：TO-263-2L；N-Channel Enhancement Mode MOSFET

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HUAYI

华羿微电

N-Channel Enhancement Mode MOSFET

文件：763.62 Kbytes 页数：14 Pages

HOOYI

后羿半导体

Single N MOSFET(150V~300V)

Huayi

华羿微电

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：144.54 Kbytes 页数：8 Pages

IRF

5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

DESCRIPTION The µPC3215TB is a silicon monolithic IC designed as wideband amplifier. The µPC3215TB is suitable to systems required wideband operation from HF to L band. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. The package is 6-pin s

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NEC

瑞萨

Comb Filter Video Processor

Introduction The VPC 323xD is a high-quality, single-chip video front-end, which is targeted for 4:3 and 16:9, 50/60-Hz and 100/120 Hz TV sets. It can be combined with other members of the DIGIT3000 IC family (such as DDP 331x) and/or it can be used with 3rd-party products. The main featur

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MICRONAS