HW327

1/2 WATT METAL

HW327

1/2 WATT METAL

HW327

1/2 WATT METAL

INA327

Precision,Rail-to-RailI/OINSTRUMENTATIONAMPLIFIER

INA327

Precision,Rail-to-RailI/OINSTRUMENTATIONAMPLIFIER

IP327

1xMiniPCI-Eslot(mSATAcompatible)

ISCNH327P

iscN-ChannelMOSFETTransistor

J327

TOSHIBAInsulatedGateBipolarTransistorSiliconNChannelIGBTCurrentResonanceInverterSwitchingApplication

CurrentResonanceInverterSwitchingApplication •Enhancementmodetype •Highspeed:tf=0.19µs(typ.)(IC=50A) •Lowsaturationvoltage:VCE(sat)=1.9V(typ.)(IC=50A) •FRDincludedbetweenemitterandcollector •FourthgenerationIGBT •TO-3P(N)(Toshibapackagename)

J327

TOSHIBAField-EffectTransistorSiliconP-ChannelMOSType(U-MOSVI)

J327

Field-EffectTransistorSiliconP-ChannelMOSType(U-MOS??

○PowerManagementSwitchApplications •1.5-Vdrive •LowON-resistance:RDS(ON)=242mΩ(max)(@VGS=-1.5V) RDS(ON)=170mΩ(max)(@VGS=-1.8V) RDS(ON)=125mΩ(max)(@VGS=-2.5V)