IRFE230

SimpleDriveRequirements

IRFF230

5.5A,200V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRFF230

N-CHANNELENHANCEMENT

IRFF230

N-CHANNELPOWERMOSFET

Features: •HermeticLowProfileTO-39(TO-205AF)MetalPackage. •IdeallySuitedForSwitching,PowerSupply,MotorControlandAmplifierApplications. •ScreeningOptionsAvailable.

IRFR230

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatest processingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedand

IRFR230A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10A(Max.)@VDS=200V LowRDS(ON):0.333(Typ.) W m

IRFR230A

iscN-ChannelMOSFETTransistor

IRFR230B

200VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulsein

IRFS230

iscN-ChannelMOSFETTransistor

IRFS230

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.2A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.