IRF132

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

IRF132

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

IRF132

HighPower,HighSpeedApplications

DESCRIPTION •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage-:VDSS=100V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.25Ω(Max) •HighPower,HighSpeedApplications APPLICATIONS •Switchingpowersupplies •UPS •Motorcontrols •Highenergypulsecircuits.

IRFF132

N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors 7.0Aand8.0A,60V-100VrDS(on)=0.18Ωand0.25Ω

IRFP132

N-CHANNELPOWERMOSFETS

IRFS132

iscN-ChannelMOSFETTransistor

IRFS132

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8.3A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRKF132

FASTTHYRISTOR/DIODEandTHYRISTOR

IS132

TRANSIENTVOLTAGESUPPRESSOR

IS132

GeneralPurposeDiodes