Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 7.0 max) • Low capacitance. (C = 0.25pFtyp) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：27.87 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

HIGH-VOLTAGE DIODES

Features Controlled avalanche characteristic combined with the ability to dissipate reverse power Plastic package has underwriters laboratory lammability classification 94V-0 Low forward voltage drop Typical IR less than 1 uA High overload surge capability High temper

文件：51.79 Kbytes 页数：2 Pages

LRC

乐山无线电

0.35A Axial Leaded High Voltage Rectifier

Features • Low cost • Low lekage • Isolated case • Surge overload rating 50 amperes peak • Low forward voltage drop

文件：45.06 Kbytes 页数：1 Pages

SUNMATE

森美特

HIGH VOLTAGE ASSEMBLIED RECTIFIER

VOLTAGE：5000-16000V CURRENT：0.35 to 0.45A FEATURES • Low cost • Low lekage • Isolated case • Surge overload rating – 50 amperes peak • Low forward voltage drop

文件：40.32 Kbytes 页数：1 Pages

CHONGQING

平伟实业

TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE ASSEMBLIED RECTIFIER

VOLTAGE RANGE - 5000 to 16000 Volts CURRENT - 0.35 Ampere FEATURES * Low cost * Low leakage * Isolated case * Surge overload rating - 50 amperes peak * Low forward voltage drop

文件：389.6 Kbytes 页数：2 Pages

DCCOM

道全

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 7.0 Ω max) • Low capacitance. (C = 0.25 pF typ) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：56.99 Kbytes 页数：5 Pages

RENESAS

瑞萨

HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes)

文件：224.81 Kbytes 页数：2 Pages

RECTRON

丽正国际

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf =7.0Ωmax) • Low capacitance. (C=0.25pF typ) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：28.36 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 7.0 Ω max) • Low capacitance. (C = 0.25 pF typ) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：70.66 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features • Low forward resistance. (rf = 7.0 Ω max) • Low capacitance. (C = 0.25 pF typ) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：71.27 Kbytes 页数：5 Pages

RENESAS

瑞萨