20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t

文件：284.05 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t

文件：109.39 Kbytes 页数：10 Pages

INTERSIL

20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

Renesas

瑞萨

20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

ONSEMI

安森美半导体

20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t

文件：109.39 Kbytes 页数：10 Pages

INTERSIL

20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t

文件：284.05 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：873.88 Kbytes 页数：4 Pages

BYCHIP

百域芯