IRF530

N-CHANNELENHANCEMENT-MODESILICONGATE

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET14AMPERES100VOLTSRDS(on)=0.140Ω

IRF530

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

IRF530

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

IRF530

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

IRF530

N-CHANNEL100V-0.115W-14ATO-220LOWGATECHARGESTripFET??IIPOWERMOSFET

IRF530

N-ChannelPowerMOSFETsAvalancheEnergyRated

IRF530

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-channelenhancementmodePOWERMOSfieldeffecttransistors.EasydriveandveryfastswitchingtimesmakethesePOWERMOStransistorsidealforhighspeedswitchingapplications.ApplicationsincludeDC/DCconverters,UPSbatterychargers,s

IRF530

PowerMOSFET(Vdss=100V,Rds(on)=0.16ohm,Id=14A)

IRF530

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

IRF530

N?묬hannelEnhancement?묺odeSiliconGate

TMOSE−FET.™PowerFieldEffectTransistor N−ChannelEnhancement−ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain−to−sourcediodewithafastrecoverytime.Designedfo