TVS Diode Array

FEATURES  IEC61000-4-2 (ESD) ±30kV (Contact) ±30kV (Air)  IEC61000-4-4 (EFT) 40A (5/50ηs)  350 Watts Peak Pulse Power per (tp=8/20μs)  Protects one bidirectional line or two unidirectional lines  Low clamping voltage  Working voltages: 3.3V to 36V  Low leakage current

文件：1.4175 Mbytes 页数：4 Pages

HUIXIN

慧芯电子

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • 175 °C Junction Temperature • VRRM 80 to 100 Volts • Economical Surface Mount Package

文件：92.2 Kbytes 页数：2 Pages

MICROSEMI

美高森美

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • 175 °C Junction Temperature • VRRM 80 to 90 Volts • Economical Surface Mount Package

文件：79.85 Kbytes 页数：2 Pages

MICROSEMI

美高森美

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • 175 °C Junction Temperature • VRRM 80 to 100 Volts • Economical Surface Mount Package

文件：92.2 Kbytes 页数：2 Pages

MICROSEMI

美高森美

1 Amp Schottky Rectifier

● Uderwirters Laboratory Flammability Class 94V-0 ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● Surface mount package

文件：94.71 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Bidirectional TVS Diode Array

FEATURES  IEC61000-4-2 (ESD) ±30kV (Contact) ±30kV (Air)  IEC61000-4-4 (EFT) 40A (5/50ηs)  350 Watts Peak Pulse Power per (tp=8/20μs)  Protects two bidirectional lines Low clamping voltage  Working voltages: 3.3V to 36V  Low leakage current

文件：1.43265 Mbytes 页数：4 Pages

HUIXIN

慧芯电子

HIGH EFFICIENCY SILICON RECTIFIER

文件：88.14 Kbytes 页数：2 Pages

CHENMKO

力勤

HIGH EFFICIENCY SILICON RECTIFIER

文件：111.64 Kbytes 页数：2 Pages

CHENMKO

力勤

Si Schottky Rectifier Diodes

1A,80V-100V surface mount Schottky rectifier in DO215AA gull wing package

Microchip

微芯科技

Si Schottky Rectifier Diodes

1Amp, 80V-100V Schottky Rectifier in plastic DO214BA surface mount package

Microchip

微芯科技