| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HSM12 | TVS Diode Array FEATURES IEC61000-4-2 (ESD) ±30kV (Contact) ±30kV (Air) IEC61000-4-4 (EFT) 40A (5/50ηs) 350 Watts Peak Pulse Power per (tp=8/20μs) Protects one bidirectional line or two unidirectional lines Low clamping voltage Working voltages: 3.3V to 36V Low leakage current 文件:1.4175 Mbytes 页数:4 Pages | HUIXIN 慧芯电子 | HUIXIN | |
Silicon Epitaxial Planar Diode for High Voltage Switching Features • High reverse voltage. (VR = 400 V) • MPAK package is suitable for high density surface mounting and high speed assembly. 文件:55.28 Kbytes 页数:5 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon Epitaxial Planar Diode for High Speed Switching Features • Low capacitance, proof against high voltage. • Fast recovery time. • MPAK package is suitable for high density surface mounting and high speed assembly. 文件:85.21 Kbytes 页数:7 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon Epitaxial Planar Diode for Switching Features • Low reverse current. • MPAK package is suitable for high density surface mounting and high speed assembly. 文件:26.63 Kbytes 页数:6 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon Epitaxial Planar Diode for High Speed Switching Features • Low reverse current. (IR = 0.01 µA max) • MPAK package is suitable for high density surface mounting and high speed assembly. 文件:65.03 Kbytes 页数:5 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon Epitaxial Planar Diode for Switching Features • Low reverse current. • MPAK package is suitable for high density surface mounting and high speed assembly. 文件:26.63 Kbytes 页数:6 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon Schottky Barrier Diode for System Protection Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and – surge. • Low VF and low leakage current. • MPAK package is suitable for high density surface mounting and high speed assembly 文件:29.32 Kbytes 页数:6 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon Schottky Barrier Diode for System Protection Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and – surge. • Low VF and low leakage current. • MPAK Package is suitable for high density surface mounting and high speed assembly. 文件:59.52 Kbytes 页数:6 Pages | RENESAS 瑞萨 | RENESAS | ||
Bidirectional TVS Diode Array FEATURES IEC61000-4-2 (ESD) ±30kV (Contact) ±30kV (Air) IEC61000-4-4 (EFT) 40A (5/50ηs) 350 Watts Peak Pulse Power per (tp=8/20μs) Protects two bidirectional lines Low clamping voltage Working voltages: 3.3V to 36V Low leakage current 文件:1.43265 Mbytes 页数:4 Pages | HUIXIN 慧芯电子 | HUIXIN | ||
HIGH EFFICIENCY SILICON RECTIFIER 文件:88.14 Kbytes 页数:2 Pages | CHENMKO 力勤 | CHENMKO |
技术参数
- 引脚总数:
24
- 触头材质:
铜铍
- 触头镀层:
金
- 工作温度范围:
-65℃~+125℃
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOS |
25+ |
SMD |
3000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
HITACHI |
23+ |
SMD |
3600 |
绝对全新原装!现货!特价!请放心订购! |
询价 | ||
HIT |
06+ |
原厂原装 |
9051 |
只做全新原装真实现货供应 |
询价 | ||
HITACHI |
24+ |
原厂封装 |
9000 |
原装现货假一罚十 |
询价 | ||
RENESAS瑞萨/HITACHI日立 |
24+ |
SOT-23 |
12200 |
新进库存/原装 |
询价 | ||
RENESAS |
2016+ |
SMD |
2958 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
HITACHI |
24+ |
SMD |
6980 |
原装现货,可开13%税票 |
询价 | ||
RENESAS |
11+PB |
SOT23 |
6000 |
全新原装进口自己库存优势 |
询价 | ||
RENESAS |
24+ |
SOT23-3 |
5000 |
全现原装公司现货 |
询价 | ||
RENESAS |
17+ |
SOT23/SOT323 |
9988 |
全新原装现货QQ:547425301手机17621633780杨小姐 |
询价 |
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