Bidirectional TVS Diode Array

FEATURES  IEC61000-4-2 (ESD) ±30kV (Contact) ±30kV (Air)  IEC61000-4-4 (EFT) 40A (5/50ηs)  350 Watts Peak Pulse Power per (tp=8/20μs)  Protects two bidirectional lines Low clamping voltage  Working voltages: 3.3V to 36V  Low leakage current

文件：1.43265 Mbytes 页数：4 Pages

HUIXIN

慧芯电子

TVS Diode Array

FEATURES  IEC61000-4-2 (ESD) ±30kV (Contact) ±30kV (Air)  IEC61000-4-4 (EFT) 40A (5/50ηs)  350 Watts Peak Pulse Power per (tp=8/20μs)  Protects one bidirectional line or two unidirectional lines  Low clamping voltage  Working voltages: 3.3V to 36V  Low leakage current

文件：1.4175 Mbytes 页数：4 Pages

HUIXIN

慧芯电子

Bidirectional TVS Diode Array

FEATURES  IEC61000-4-2 (ESD) ±30kV (Contact) ±30kV (Air)  IEC61000-4-4 (EFT) 40A (5/50ηs)  350 Watts Peak Pulse Power per (tp=8/20μs)  Protects two bidirectional lines Low clamping voltage  Working voltages: 3.3V to 36V  Low leakage current

文件：1.43265 Mbytes 页数：4 Pages

HUIXIN

慧芯电子

Bidirectional TVS Diode Array

FEATURES  IEC61000-4-2 (ESD) ±30kV (Contact) ±30kV (Air)  IEC61000-4-4 (EFT) 40A (5/50ηs)  350 Watts Peak Pulse Power (tp=8/20μs)  Protects two bidirectional lines  Low clamping voltage  Working voltages : 24V  Low leakage current  Qualified according to AEC-Q101

文件：725.37 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

Silicon Epitaxial Planar Diode for Tuner Band Switch

Features • Low forward resistance. (rf = 0.9 max) • Low capacitance. (C = 1.2pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：25.06 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar Diode

Features ● Low forward resistance. (rf = 0.9 max) ● Low capacitance. (C = 1.2pFmax) ● MPAK package is suitable for high density surface mounting and high speed assembly.

文件：35.59 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon Epitaxial Planar Diode for Tuner Band Switch

Features • Low forward resistance. (rf = 0.9 max) • Low capacitance. (C = 1.2pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：25.23 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar Diode

Features ● Low forward resistance. (rf = 0.9 max) ● Low capacitance. (C = 1.2pFmax) ● MPAK package is suitable for high density surface mounting and high speed assembly.

文件：35.77 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon Epitaxial Planar Diode for Tuner Band Switch

Features • Low forward resistance. (rf = 0.9 max) • Low capacitance. (C = 1.2pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

文件：25.24 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar Diode

Features ● Low forward resistance. (rf = 0.9 max) ● Low capacitance. (C = 1.2pFmax) ● MPAK package is suitable for high density surface mounting and high speed assembly.

文件：35.6 Kbytes 页数：1 Pages

KEXIN

科信电子