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Foxconn

富士康

6-Pin DIP Optoisolators for Power Supply Applications(No Base Connection)

The MOC8106, MOC8107 and MOC8108 devices consist of a gallium arsenide LED optically coupled to a silicon phototransistor in a dual–in–line package. • Closely Matched Current Transfer Ratio (CTR) Minimizes Unit–to–Unit Variation • Narrow (CTR) Windows that translate to a Narrow and Predictable O

文件：198.51 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER

DESCRIPTION The µPC8172TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver transmitter stage. This IC is manufactured using NEC’s 30 GHz fmax. UHS0 (Ultra High Speed Process) silicon bipolar process. This IC is as same circuit current as conv

文件：79.01 Kbytes 页数：7 Pages

NEC

瑞萨

SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR TELEPHONE

DESCRIPTION The µPC8163TB is a silicon monolithic integrated circuit designed as frequency up-converter for cellular telephone transmitter stage. The µPC8163TB has improved intermodulation performance and smaller package. The µPC8163TB is manufactured using NEC’s 20 GHz fT NESATTMlll silicon bip

文件：133.76 Kbytes 页数：16 Pages

NEC

瑞萨