MOSFET

HOMSSEMI

成启

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：295.27 Kbytes 页数：8 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：372.5 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFETTM Power MOSFETs Q-Class

HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Unclamped Inductive Switch

文件：55.71 Kbytes 页数：2 Pages

IXYS

艾赛斯