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HS4N60

MOSFET

HOMSSEMI

成启

HOMSSEMI

MGP4N60E

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件:124.46 Kbytes 页数:6 Pages

MOTOROLA

摩托罗拉

MGP4N60E

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件:120.94 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MGP4N60ED

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

文件:146.13 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

技术参数

  • RDS(ON):

    2.5

  • ID:

    4

  • V(th):

    2-4

  • PACKAGE:

    TO-220\\TO-220F\\TO-251\\TO-252\\TO-262

供应商型号品牌批号封装库存备注价格
HOMSEMI
2022+
TO-220F
32500
原厂代理 终端免费提供样品
询价
HOMSEMI
23+
TO-220
6800
专注配单,只做原装进口现货
询价
国产
23+
TO-252
50000
全新原装正品现货,支持订货
询价
HOMSEMI
23+
TO-220F
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
国产
25+
TO-252
90000
全新原装现货
询价
HOMSEMI
2021+
TO-251
5800
原装现货,欢迎来电咨询
询价
HOMSEMI
25+
TSSOP-14
10000
原厂原包装,终端BOM表可配单
询价
INTERSIL
25+
PLCC44
2618
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价
INTERSIL
00/01+
PLCC44
2203
全新原装100真实现货供应
询价
INTERSIL
25+
PLCC44
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
更多HS4N60供应商 更新时间2026-10-25 14:01:00